Planar passivation layers

ABSTRACT

A semiconductor device includes: a protruding conductive structure that protrudes to a height from a first surface of the semiconductor device; and a first passivation layer, the first passivation layer overlaying the protruding conductive structure by a first thickness, the first passivation layer overlaying the first surface by a second thickness greater than the first thickness, wherein the first passivation layer is planar at a top surface over the first thickness and the second thickness.

BACKGROUND

The semiconductor industry has made significant advancements in itspursuit of higher device density with lower cost. Technological advancesin semiconductor device, or integrated circuit (IC), materials anddesign have produced progressively smaller and more complex circuits. Inthe course of semiconductor device evolution, functional density (forexample, the number of interconnected devices per chip area) hasgenerally increased while geometry sizes have decreased. This scalingdown process generally provides benefits by increasing productionefficiency and lowering associated costs

However, increased functional density has increased the complexity ofsemiconductor devices, such as by decreasing the distance betweeninterconnected layers and devices on a semiconductor device and theamount of material used to constitute the various devices and layers.This may result in semiconductor devices become more fragile asfunctional density increases, especially when handling or packagingsemiconductor devices. Accordingly, there may be a greater chance offailures per chip area during semiconductor processing.

Therefore, conventional semiconductor device fabrication and processingare not entirely satisfactory.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that various features are not necessarily drawn to scale. In fact,the dimensions and geometries of the various features may be arbitrarilyincreased or reduced for clarity of discussion.

FIG. 1 illustrates a flow chart of an exemplary method for forming asemiconductor device including planar passivation layers, in accordancewith some embodiments.

FIGS. 2A, 2B, 2C, 2D, 2E, and 2F illustrate cross-sectional views of anexemplary semiconductor device during various fabrication stages, madeby the method of FIG. 1, in accordance with some embodiments.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

The following disclosure describes various exemplary embodiments forimplementing different features of the subject matter. Specific examplesof components and arrangements are described below to simplify thepresent disclosure. These are, of course, merely examples and are notintended to be limiting. For example, it will be understood that when anelement is referred to as being “connected to” or “coupled to” anotherelement, it may be directly connected to or coupled to the otherelement, or one or more intervening elements may be present.

In addition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

The present disclosure provides various embodiments of a semiconductordevice with a planar passivation layer. A passivation layer may be aprotective layer or coating formed on an overlayable surface of asemiconductor device to protect the semiconductor device during handlingor packaging. An overlayable surface of a semiconductor device may beany surface of the semiconductor device that may be overlaid with apassivation layer. Examples of overlayable surfaces will be discussedbelow at least in connection with FIG. 2D. Passivation layers may bepart of the semiconductor device and may protect a semiconductor devicefrom various stressors, such as compression, moisture, heat, shearforces, damaging mediums (e.g., damaging chemicals or gases) or anyother externally inducible damage to a semiconductor device.

Typically, passivation layers may be conformal to an overlayable surfaceof a semiconductor device as a thin layer formed conformally atop asemiconductor device. Semiconductor devices may include non-planarstructures, such as structures that protrude from or that depress intoan overlayable surface of the semiconductor device (e.g., portions ofthe overlayable surface higher or lower than other areas of theoverlayable surface). These non-planar structures may include protrudingconductive structures (e.g., conductive structures that protrude from asemiconductor device, discussed further below) that facilitatesemiconductor device packaging, or interfacing between differentsemiconductor devices or between a semiconductor device and anotherelectronic device. However, weak points along the passivation layer maybe present when a passivation layer is conformal with a semiconductordevice with non-planar structures. For example, conformal passivationlayers may include non-planar features (such as protrusions, depressionsand transitions to or from protrusions and depressions such as corners)along the passivation layer where non-planar structures protrude from orrecess into the surface of the semiconductor device. The passivationlayer at these non-planar planar features may have weak points thatincur greater stress as stressors may be more concentrated at thesenon-planar features (due to a variety of factors such as greater shearforces, greater compression forces, greater concentration of thestressor, or greater surface area exposed to the stressor) than at otherlocations of the passivation layer that are planar. Stated another way,an overlayable surface of the semiconductor device may have non-planarstructures while a conformal passivation layer overlaying (e.g.,coating) the non-planar structures may have non-planar features (andassociated weak points) in virtue of the overlaid non-planar structures.

Accordingly, systems and methods in accordance with various embodimentsdescribe planar passivation layers that may be formed on a semiconductordevice with non-planar structures (i.e., planar passivation layers thatmay be formed even if the overlayable semiconductor device surfaceincludes protrusions, depressions and transitions to or from protrusionsand depressions such as corners). These planar passivation layers mayinclude a thickness (e.g., a planarization thickness) from theoverlayable surface of the semiconductor device that is sufficient for aplanarization process to planarize (e.g., make flat, or planar) thesurface of the passivation layer over non-planar structures and producea planar passivation layer. Additionally, the planar passivation layermay be formed in place of, or to replace, a first formed conformalpassivation layer (e.g., the lowest conformal passivation layer formedover an overlayable semiconductor device surface on which otherpassivation layers are formed) over non-planar structures. Accordingly,additional passivation layers formed on top of the planar passivationlayer may also be planar and without weak points due to non-planarfeatures.

In certain embodiments, the passivation layer may be formed across thesemiconductor device except where exposure of the overlayablesemiconductor surface (which may include a non-planar structure) wouldbe advantageous, such as for protruding, recessed, or other contactbased interconnects that may be utilized during semiconductor devicepackaging. Accordingly, passivation layers may have an opening (e.g.,due to being etched through or not formed at certain locations) toexpose an underlying overlayable semiconductor surface (which mayinclude a non-planar structure) to facilitate various functionalitiessuch as semiconductor device packaging. However, the planar passivationlayer over the remaining surface of the semiconductor device that is notexposed for a functional purpose may be rendered planar and without weakpoints.

Accordingly, a planar passivation layer may advantageously not havenon-planar features which, as discussed above, may be weak points alonga passivation layer more susceptible to stressors that would be presenton a conformal passivation layer overlaying the non-planar structures ofthe semiconductor device.

FIG. 1 illustrates a flowchart of a method 100 to form a semiconductordevice with a planar passivation layer according to one or moreembodiments of the present disclosure. It is noted that the method 100is merely an example, and is not intended to limit the presentdisclosure. Accordingly, it is understood that additional operations maybe provided before, during, and after the method 100 of FIG. 1, certainoperations may be omitted, and some other operations may only be brieflydescribed herein.

In some embodiments, operations of the method 100 may be associated withthe cross-sectional views of a semiconductor device at variousfabrication stages as shown in FIG. 2A, 2B, 2C, 2D, 2E, and 2Frespectively, which will be discussed in further detail below.

Referring now to FIG. 1, the method 100 starts with operation 102 inwhich a semiconductor substrate with at least a conductive feature isprovided. The method 100 continues to operation 104 where intermediateconductive structures are formed. The method 100 continues to operation106 where non-planar structures, such as protruding conductivestructures, are formed. The method 100 continues to operation 108 wherea planar passivation layer is formed. The method 100 continues tooperation 110 where additional passivation layer(s) are formed. Themethod 100 continues to operation 112 where trenches are formed throughthe passivation layers.

As mentioned above, FIG. 2A through FIG. 2G illustrate, in across-sectional view, a portion of a semiconductor device 200 at variousfabrication stages of the method 100 of FIG. 1. The semiconductor device200 may include, be included in, or be a microprocessor, memory cell,wafer, and/or other integrated circuit (IC). Also, FIGS. 2A through 2Gare simplified for a better understanding of the concepts of the presentdisclosure. For example, although the figures illustrate thesemiconductor device 200, it is understood the IC may comprise a numberof other devices such as resistors, capacitors, inductors, fuses, etc.,which are not shown in FIGS. 2A-2G, for purposes of clarity ofillustration.

FIG. 2A is a cross-sectional view of the semiconductor device 200including a substrate 202 with two conductive features 204 at one of thevarious stages of fabrication corresponding to operation 102 of FIG. 1,in accordance with some embodiments. Although the semiconductor device200 in the illustrated embodiment of FIG. 2A includes only twoconductive features (e.g., 204), it is understood that the illustratedembodiment of FIG. 2A and the following figures are merely provided forillustration purposes. Thus, the semiconductor device 200 may includeany desired number of conductive features while remaining within thescope of the present disclosure.

In some embodiments, the substrate 202 includes a silicon substrate.Alternatively, the substrate 202 may include other elementarysemiconductor material such as, for example, germanium. The substrate202 may also include a compound semiconductor such as silicon carbide,gallium arsenic, indium arsenide, and indium phosphide. The substrate202 may include an alloy semiconductor such as silicon germanium,silicon germanium carbide, gallium arsenic phosphide, and gallium indiumphosphide. In one embodiment, the substrate 202 includes an epitaxiallayer. For example, the substrate may have an epitaxial layer overlyinga bulk semiconductor. Furthermore, the substrate 202 may include asemiconductor-on-insulator (SOI) structure. For example, the substratemay include a buried oxide (BOX) layer formed by a process such asseparation by implanted oxygen (SIMOX) or other suitable technique, suchas wafer bonding and grinding.

In some embodiments, the substrate 202 also includes various p-typedoped regions and/or n-type doped regions, implemented by a process suchas ion implantation and/or diffusion. Those doped regions includen-well, p-well, light doped region (LDD), heavily doped source and drain(S/D), and various channel doping profiles configured to form variousintegrated circuit (IC) devices, such as a complimentarymetal-oxide-semiconductor field-effect transistor (CMOSFET), imagingsensor, and/or light emitting diode (LED). The substrate 202 may furtherinclude other active devices, or functional features, such as a resistoror a capacitor formed in and on the substrate. The substrate 202 furtherinclude lateral isolation features provided to separate various devicesformed in the substrate 202. In one embodiment, shallow trench isolation(STI) features are used for lateral isolation. The various devicesfurther include silicide disposed on S/D, gate and other device featuresfor reduced contact resistance when coupled to output and input signals.

In an embodiment, the conductive features 204 may be a source, drain orgate electrode of a transistor device. Alternatively, the conductivefeatures 204 may be a silicide feature disposed on a source, drain orgate electrode. The silicide feature may be formed by a self-alignedaligned silicide (typically known as “silicide”) technique. In anotherembodiment, the conductive features 204 may include an electrode of acapacitor or one end of a resistor.

As will be discussed in further below, the semiconductor device 200 maybe formed, or processed, on a layer-by-layer basis, where each layer isdeposited and patterned on a preceding layer. These layers (and at leastone substrate on which the layers are formed) may include variousconductive elements, such as conductive features 204 (e.g., doped wells,voltage sources, or other active devices) that are interconnected viaconductive structures (e.g., vias or conductive lines). Stated anotherway, conductive elements include conductive features 204 and conductivestructures, and conductive features are active devices within asemiconductor device that may be interconnected using conductivestructures. The conductive elements may include conductive material andthe layers may include non-conductive material (e.g., insulatingmaterial) which may insulate conductive elements from each other.

FIG. 2B is a cross-sectional view of the semiconductor device 200including intermediate conductive structures 206, 208 at one of thevarious stages of fabrication that corresponds to operation 104 of FIG.1, in accordance with some embodiments. As introduced above, conductivestructures may be interconnects for conductive features (e.g., activedevices in the semiconductor device). Also, both conductive structuresand conductive features may be termed as conductive elements. Theintermediate conductive structures may include vertical conductivestructures 206 (e.g., a via) and horizontal conductive structures 208(e.g., a conductive line). For clarity, these intermediate conductivestructures are described as “intermediate” as they are between (and willfacilitate a conductive path between) the conductive features 204 andthe protruding conductive structures introduced above and discussedfurther below.

As shown, the intermediate vertical conductive structures 206 mayvertically extend through isolation layer 214 to couple (e.g.,conductively couple) with other conductive elements, such as conductivefeature 204 and intermediate horizontal conductive structures 208. Also,as discussed further below, intermediate horizontal conductivestructures 208 may horizontally extend (e.g., over a respective width)through isolation layer 216 to couple with other conductive elements,such as intermediate vertical conductive structures 206 and theprotruding conductive structures (discussed further below). In someembodiments, the intermediate horizontal conductive structures 208 maybe wider than the intermediate vertical conductive structures 206. Incertain embodiments, the intermediate vertical conductive structures 206adjacent to the conductive featured 204 may be a conductive plug. Insome further embodiments, the semiconductor device 200 may includebarrier layers 210 and 212 surrounding sidewalls and bottom surfaces ofthe intermediate conductive structures 206 and 208, respectively.

The isolation layers may include a non-conductive material that is atleast one of: silicon oxide, a low dielectric constant (low-k) material,other suitable dielectric material, or a combination thereof. The low-kmaterial may include fluorinated silica glass (FSG), phosphosilicateglass (PSG), borophosphosilicate glass (BPSG), carbon doped siliconoxide (SiO_(x)C_(y)), Black Diamond® (Applied Materials of Santa Clara,Calif.), Xerogel, Aerogel, amorphous fluorinated carbon, Parylene, BCB(bis-benzocyclobutenes), SiLK (Dow Chemical, Midland, Mich.), polyimide,and/or other future developed low-k dielectric materials.

In some embodiments, the intermediate conductive structures 208, 206 mayinclude conductive materials, such as a metal, or for example, copper(Cu), tungsten (W), or a combination thereof. In some other embodiments,the intermediate conductive structures 208, 206 may include othersuitable conductive materials (e.g., metal materials such as gold (Au),cobalt (Co), silver (Ag), etc. and/or conductive materials (e.g.,polysilicon)) while remaining within the scope of the presentdisclosure.

In some embodiments, the barrier layers 210, 212 may include barriermaterials that enhance (e.g., improves) conductivity of conductivematerials and may effectively prevent (e.g., block) metal atoms fromdiffusing from conductive materials into non-conductive materials duringa deposition process to form conductive structures or conductivefeatures. Examples of barrier materials include tantalum nitride (TaN),tantalum (Ta), titanium nitride (TiN), titanium (Ti), cobalt tungsten(CoW), tungsten nitride (WN), or the like.

In the following discussion, reference to conductive structures 206 and208 may or may not include their corresponding barrier layers 210 and212 as part of the respective conductive structure 206 and 208. Invarious embodiments, the barrier layer does not change the function ofthe respective conductive structures 206 and 208, except to enhance thematerial properties of the adjoining conductive structures 206 and 208.

The intermediate vertical conductive structures 206 may be formed by atleast some of the following process steps: using chemical vapordeposition (CVD), physical vapor deposition (PVD), spin-on coating,and/or other suitable techniques to deposit the non-conductive materialover the substrate 202 and the conductive features 204 to form aninitial first isolation layer (the isolation layer is a remainingportion of the initial first isolation layer after the later performedpatterning process); performing one or more patterning processes (e.g.,a lithography process, a dry/wet etching process, a cleaning process, asoft/hard baking process, etc.) to form openings through the initialfirst isolation layer; using CVD, PVD, and/or other suitable techniquesto deposit the aforementioned barrier material along a bottom surfaceand sidewalls of the opening to surround the openings; using CVD, PVD,E-gun, and/or other suitable techniques to fill the openings withconductive material, and polishing out excessive material to form theintermediate vertical conductive structures 206.

As shown, the intermediate horizontal conductive structures 208horizontally extends over a respective width in the isolation layer 216.The intermediate horizontal conductive structures 208 may beconductively coupled to the intermediate vertical conductive structures206. The intermediate horizontal conductive structures 208 may be formedby at least some of the following process steps: using CVD, PVD, spin-oncoating, and/or other suitable techniques to deposit non-conductivematerial over the isolation layer 214 and the intermediate verticalconductive structures 206 to form an initial first isolation layer (theisolation layer 214 is a remaining portion of this initial firstisolation layer after the later performed patterning process);performing one or more patterning processes (e.g., a lithographyprocess, a dry/wet etching process, a cleaning process, a soft/hardbaking process, etc.) to form openings through the initial firstisolation layer; using CVD, PVD, and/or other suitable techniques todeposit the aforementioned barrier material along a bottom surface andsidewalls of the openings to surround the opening; using CVD, PVD,E-gun, and/or other suitable techniques to fill the openings withconductive material, and polishing out excessive material to form theintermediate horizontal conductive structures 208.

Although the semiconductor device 200 in the illustrated embodiment ofFIG. 2B includes two intermediate conductive structures 206 and 208within two isolation layers 214 and 216, it is understood that theillustrated embodiment of FIG. 2B and the following figures are merelyprovided for illustration purposes. Thus, the semiconductor device 200may include any desired number of conductive structures within anydesired number of isolation layers (including one isolation layer, oneor more pairs of isolation layers, or no isolation layers) whileremaining within the scope of the present disclosure. For example, in analternate embodiment illustrated in FIG. 2B with dotted lines, twoadditional isolation layers 217 may be formed on top of isolation layer216.

FIG. 2C is a cross-sectional view of the semiconductor device 200including protruding conductive structures 218 at one of the variousstages of fabrication that corresponds to operation 106 of FIG. 1, inaccordance with some embodiments. In some embodiments, the protrudingconductive structures 218 may be a conductive structure conductivelycoupled with the underlying intermediate horizontal conductivestructures 208. The protruding conductive structures 218 may protrudeaway from the semiconductor device 200 relative to another surface 220of the semiconductor device 200. As illustrated, the other surface 220of the semiconductor device 200 is the exposed top surface of a flatconformal passivation layer 223, which is part of the semiconductordevice 200. In certain embodiments, the protruding conductive structures218 may include a barrier layer at the interface between the protrudingconductive structures 218 with each of the flat conformal passivationlayer 223, the intermediate conductive structure 208., intermediateisolation layer 216, and barrier layer 212.

As shown, the protruding conductive structures 218 may be a conductivestructure that may be used as an interconnect with external electronicdevices for semiconductor device packaging, as will be discussed furtherbelow in connection with FIG. 2F. In certain embodiments, optionally,the flat conformal passivation layer 223 may be formed prior to theformation of the planar passivation layer discussed further below. Thisflat conformal passivation layer 223 may be formed as an additionallayer of protection on an isolation layer. This flat conformalpassivation layer 223 is illustrated in FIG. 2C as overlyingintermediate isolation layer 216, which is flat, and is in-between, andslightly extending into, the protruding conductive structures 218. Itshould be noted that this flat conformal passivation layer 223 does notoverly any non-planar structures and, although conformal, would notinclude any non-planar features (and associated weak points) since thereare no underlying non-planar structures. As discussed above, passivationlayers including non-planar features may have weak points that incurgreater stress as stressors may be more concentrated at these non-planarfeatures (due to a variety of factors such as greater shear forces,greater compression forces, greater concentration of the stressor, orgreater surface area exposed to the stressor) than at other locations ofthe passivation layer that are planar. Accordingly, the flat conformalpassivation layer 223 is not a “planarized” passivation layer as theflat conformal passivation layer 223 does not overly non-planarstructures. For example, the flat conformal passivation layer 223overlays the intermediate isolation layer 216 and the intermediateconductive structure 208, which are planar with each other and, incombination, provides a planar surface on which the flat conformalpassivation layer 223 may be formed. In contrast, as used herein a“planar” or “planarized” passivation layer refers to a passivation laterthat is formed over non-planar structures and thereafter planarized(i.e., its top surface is made flat) to form the planar passivationlayer.

In particular embodiments, the flat conformal passivation layer 223 maybe composed of passivation materials that protect the semiconductordevice from external stressors. These passivation materials may includesilicon mononitride (SiN), dielectric materials, oxides (such asUn-doped Silicate Glass USG, Fluorinated Silicate Glass FSG, or thelike) or other materials that may suitably protect a semiconductordevice from external stressors. Examples of some passivation materialsare discussed further below. The flat conformal passivation layer 223may be formed using CVD, PVD, E-gun, and/or other suitable techniques todeposit passivation material on the intermediate isolation layer 216,and polishing out or patterning excessive material to form the flatconformal passivation layer 223.

In certain embodiments, the protruding conductive structures 218 may beformed using CVD, PVD, E-gun, and/or other suitable techniques todeposit conductive material (e.g., deposit on the intermediate isolationlayer 216 and the flat conformal passivation layer 223), and polishingout or patterning excessive material to form the protruding conductivestructures 218.

In some embodiments, the protruding conductive structures 218 mayinclude conductive materials, such as a metal, or for example, aluminum(Al), copper (Cu), tungsten (W), or a combination thereof. In some otherembodiments, the protruding conductive structures 218 may include othersuitable conductive materials (e.g., metal materials such as gold (Au),cobalt (Co), silver (Ag), etc. and/or conductive materials (e.g.,polysilicon)) while remaining within the scope of the presentdisclosure.

Although the semiconductor device 200 in the illustrated embodiment ofFIG. 2C includes two protruding conductive structures as non-planarstructures, it is understood that the illustrated embodiment of FIG. 2Cand the following figures are merely provided for illustration purposes.Thus, the semiconductor device 200 may include any desired number ortype of (e.g., conductive or non-conductive) non-planar structures whileremaining within the scope of the present disclosure.

FIG. 2D is a cross-sectional view of the semiconductor device 200including a planar passivation layer 224 at one of the various stages offabrication that corresponds to operation 108 of FIG. 1, in accordancewith some embodiments. In some embodiments, the planar passivation layer224 may not be conformal with underlying non-planar structures, such asa depression produced by the protruding conductive structures 218 (whichprotrudes relative to other surfaces 220 of the overlayablesemiconductor device surface 222, accordingly forming non-planarstructures). As introduced above, the planar passivation layer 224 maybe formed on an overlayable semiconductor device surface 222 (e.g., asurface of the semiconductor device 200 that may be overlaid with theplanar passivation layer 224). For the planar passivation layer 224, theoverlayable semiconductor device surface 222 (after formation of theflat passivation layer 223 and the protruding conductive structures 218,as discussed above) may include the exposed surfaces of the flatpassivation layer 223 and the protruding conductive structures 218.

The planar passivation layer 224 may extend from the overlayablesemiconductor device surface 222 to a planarization thickness 226 thatis sufficient for a planarization process to planarize (e.g., makeplanar) the surface of the planar passivation layer 224 over both theprotruding conductive structures 218 and the overlayable semiconductordevice surface 222 (e.g., non-planar structures) to produce a planarpassivation layer 224. For example, in the illustrated embodiment, theplanarization thickness 226 may be at or greater than a minimumplanarization thickness 228 from which a planar passivation layer may beformed. In certain embodiments, the minimum planarization thickness 228may be a thickness from the lowest point 227 in an overlayablesemiconductor device surface to a highest point 225 on an overlayablesemiconductor device plus a minimum thickness of a passivation layer. Incertain embodiments, the planar passivation layer 224 may be from about1 angstroms (Å) to about 50 Å in thickness over the highest point 225 ofthe overlayable semiconductor device surface 222 and about 2 Å to about40k Å over the lowest point 227 of the overlayable semiconductor devicesurface 222.

In particular embodiments, the planar passivation layer 224 may becomposed of passivation materials that protect the semiconductor devicefrom external stressors. These passivation materials may include siliconmononitride (SiN), dielectric materials, oxides (such as Un-dopedSilicate Glass (USG), Fluorinated Silicate Glass (FSG), or the like) orother materials that may suitably protect a semiconductor device fromexternal stressors. These materials may be selected based upon thedesired qualities of the planar passivation layer 224. For example, SiNmay be a passivation material for a passivation layer that is moistureresistant and USG may be a passivation material for a passivation layerthat is pressure resistant.

In various embodiments, the planarization process may include achemical-mechanical planarization (CMP) process that polishes or smoothsout material surfaces. For example, in certain embodiments, the planarpassivation layer 224 may be formed using CVD, PVD, E-gun, and/or othersuitable techniques to deposit passivation material at a quantitysufficient for the planar passivation layer to meet or exceed theminimum planarization thickness, and planarizing (or polishing out usinga planarization process) excessive material to form the planarpassivation layer 224. In certain embodiments, a planar passivationlayer may be formed with a planarization thickness that greatly exceedsthe minimum planarization thickness to add additional protectivepassivation materials to protect the semiconductor device from externalstressors and to make the planar passivation layer more robust (forexample, due to being composed of more material and, accordingly, tohave a more substantial physical structure).

As discussed above, advantageously, a planar passivation layer may nothave non-planar features which, as discussed above, may be weak pointsalong a passivation layer more susceptible to stressors that would bepresent on a conformal passivation layer overlaying the non-planarstructures of the semiconductor device.

FIG. 2E is a cross-sectional view of the semiconductor device 200including an additional passivation layer 230 at one of the variousstages of fabrication that corresponds to operation 110 of FIG. 1, inaccordance with some embodiments. As shown, the additional passivationlayer 230 overlays the planar passivation layer 224. Accordingly, as theplanar passivation layer 224 may be planar, the additional passivationlayer 230 may also be planar.

In various embodiments, the additional passivation layer 230 may beformed using CVD, PVD, E-gun, and/or other suitable techniques todeposit passivation material on the planar passivation layer 224, andplanarizing (or polishing out using a planarization process) excessivematerial to form the additional passivation layer 230. Although thesemiconductor device 200 in the illustrated embodiment of FIG. 2Eincludes two passivation layers (the planar passivation layer 224 andthe additional passivation layer 230, it is understood that theillustrated embodiment of FIG. 2E is merely provided for illustrationpurposes. Thus, the semiconductor device 200 may include any desirednumber of passivation layers while remaining within the scope of thepresent disclosure.

FIG. 2F is a cross-sectional view of the semiconductor device 200including trenches 232 that extend through the passivation layers 224,230 at one of the various stages of fabrication that corresponds tooperation 112 of FIG. 1, in accordance with some embodiments. As shownthe trenches 232 may be openings that extend through the passivationlayers 224, 230 to expose a surface of the protruding conductivestructures 218. The trenches 232 may be formed using a patterningprocesses (e.g., a lithography process, a dry/wet etching process, acleaning process, a soft/hard baking process, etc.) to form the trenches232 that extend through the passivation layers 224, 230.

In certain embodiments, trenches 232 may be filled with conductivematerial to form additional vertical conductive structures 234 (notedwith dotted lines due to the below discussion of other embodiment of thetrenches 232 left as openings) in a manner similar to how the verticalconductive structures 206 are formed (as discussed above). For example,the additional vertical conductive structures 234 may be formed by atleast some of the following process steps: CVD, PVD, and/or othersuitable techniques to may be used to deposit a barrier layer 236 (notedwith dotted lines) made from the aforementioned barrier material along abottom surface and sidewalls of the trenches 232 to surround thetrenches 232; using CVD, PVD, E-gun, and/or other suitable techniques tofill the trenches 232 with conductive material, and polishing outexcessive material to form the additional vertical conductive structures234. These additional vertical conductive structures 234 may be used insemiconductor packaging to interface with an external electronic device(e.g., another semiconductor device) different that the semiconductordevice 200, such as during semiconductor packaging.

In other embodiments, the trenches 232 may remain as openings to provideaccess to the protruding conductive structures 218, without forming theadditional vertical conductive structures 234. For examples, thetrenches 232 may be configured to receive an external conductivestructure from an external electronic device (e.g., anothersemiconductor device) different that the semiconductor device 200,during various applications such as semiconductor packaging. Byreceiving the external conductive structure from the external electronicdevice, the protruding conductive structures 218 may be put inconductive communication with the external electronic device (e.g., forapplications such as semiconductor packaging).

In an embodiment, a semiconductor device includes: a protrudingconductive structure that protrudes to a height from a first surface ofthe semiconductor device; and a first passivation layer, the firstpassivation layer overlaying the protruding conductive structure by afirst thickness, the first passivation layer overlaying the firstsurface by a second thickness greater than the first thickness, whereinthe first passivation layer is planar at a top surface over the firstthickness and the second thickness.

In another embodiment, a method includes: forming a structure protrudingto a height from the semiconductor device surface; forming a structureprotruding to a height from the semiconductor device surface; forming apassivation layer, the passivation layer overlaying the structure by afirst thickness, the passivation layer overlaying the semiconductordevice surface by a second thickness greater than the first thickness;and planarizing the first passivation layer.

Yet in another embodiment, a method includes: forming a conductivefeature; forming a conductive structure protruding to a height from asemiconductor device surface, the conductive structure in conductivecommunication with the conductive feature; forming a passivation layer,the passivation layer overlaying the conductive structure by a firstthickness, the passivation layer overlaying the semiconductor devicesurface by a second thickness that comprises the first thickness and theheight; and planarizing the passivation layer.

The foregoing outlines features of several embodiments so that thoseordinary skilled in the art may better understand the aspects of thepresent disclosure. Those skilled in the art should appreciate that theymay readily use the present disclosure as a basis for designing ormodifying other processes and structures for carrying out the samepurposes and/or achieving the same advantages of the embodimentsintroduced herein. Those skilled in the art should also realize thatsuch equivalent constructions do not depart from the spirit and scope ofthe present disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the present disclosure.

Conditional language such as, among others, “can,” “could,” “might” or“may,” unless specifically stated otherwise, are otherwise understoodwithin the context as used in general to convey that certain embodimentsinclude, while other embodiments do not include, certain features,elements and/or steps. Thus, such conditional language is not generallyintended to imply that features, elements and/or steps are in any wayrequired for one or more embodiments or that one or more embodimentsnecessarily include logic for deciding, with or without user input orprompting, whether these features, elements and/or steps are included orare to be performed in any particular embodiment.

Disjunctive language such as the phrase “at least one of X, Y, or Z,”unless specifically stated otherwise, is otherwise understood with thecontext as used in general to present that an item, term, etc., may beeither X, Y, or Z, or any combination thereof (e.g., X, Y, and/or Z).Thus, such disjunctive language is not generally intended to, and shouldnot, imply that certain embodiments require at least one of X, at leastone of Y, or at least one of Z to each be present.

It should be emphasized that many variations and modifications may bemade to the above-described embodiments, the elements of which are to beunderstood as being among other acceptable examples. All suchmodifications and variations are intended to be included herein withinthe scope of this disclosure and protected by the following claims.

1. A semiconductor device, comprising: a protruding conductive structurethat protrudes to a height from a first surface; and a first passivationlayer, the first passivation layer overlaying the protruding conductivestructure by a first thickness, the first passivation layer overlayingthe first surface by a second thickness greater than the firstthickness, wherein the first passivation layer is planar at a topsurface over the first thickness and the second thickness.
 2. Thesemiconductor device of claim 1, wherein the first passivation layercomprises an opening, the opening extending from the top surface to theprotruding conductive structure.
 3. The semiconductor device of claim 1,wherein the first passivation layer coats both the first surface and theprotruding conductive structure.
 4. The semiconductor device of claim 1,wherein the first thickness is of a minimum amount sufficient for thefirst passivation layer to coat the protruding conductive structure. 5.The semiconductor device of claim 1, wherein the second thicknesscomprises the first thickness and the height.
 6. The semiconductordevice of claim 1, wherein the first passivation layer comprises atleast one of silicon mononitride (SiN), Un-doped Silicate Glass (USG),and Fluorinated Silicate Glass (FSG).
 7. The semiconductor device ofclaim 1, comprising: a vertical conductive structure extending throughthe first passivation layer to conductively couple with the protrudingconductive structure.
 8. The semiconductor device of claim 7, whereinthe vertical conductive structure is in conductive communication with anexternal semiconductor device different than the semiconductor device.9. The semiconductor device of claim 1, comprising: a conductive featurewithin the semiconductor device, wherein: the protruding conductivestructure is in conductive communication with the conductive feature,and the conductive feature comprises at least one of a source, a drain,and a gate electrode of a transistor.
 10. The semiconductor device ofclaim 1, comprising: a second passivation layer overlaying the firstpassivation layer.
 11. A method, comprising: forming a semiconductordevice surface; forming a structure protruding to a height from thesemiconductor device surface; forming a first passivation layer, thefirst passivation layer overlaying the structure by a first thickness,the first passivation layer overlaying the semiconductor device surfaceby a second thickness greater than the first thickness; and planarizingthe first passivation layer.
 12. The method of claim 11, wherein thefirst passivation layer is planar at a top surface over the firstthickness and the second thickness:
 13. The method of claim 11,comprising: forming a second passivation layer overlaying the firstpassivation layer.
 14. The method of claim 11, comprising: etching thefirst passivation layer overlaying the structure to form a trench, andfilling the trench with conductive material to form a conductivestructure within the trench.
 15. The method of claim 14, comprising:conductively coupling the conductive structure with an externalsemiconductor device different than a semiconductor device that theconductive structure is formed on.
 16. The method of claim 11, whereinthe second thickness that comprises the first thickness and the height.17. A method, comprising: forming a conductive feature; forming aconductive structure protruding to a height from a semiconductor devicesurface, the conductive structure in conductive communication with theconductive feature; forming a passivation layer, the passivation layeroverlaying the conductive structure by a first thickness, thepassivation layer overlaying the semiconductor device surface by asecond thickness that comprises the first thickness and the height; andplanarizing the passivation layer.
 18. The method of claim 17, whereinthe passivation layer is planar at a surface of the passivation layerover the first thickness and the second thickness:
 19. The method ofclaim 17, comprising: applying a chemical-mechanical planarizationprocess to the passivation layer.
 20. The method of claim 17,comprising: forming an opening in the passivation layer, the openingextending from a surface of the passivation layer to the conductivestructure.
 21. A semiconductor device, comprising: a semiconductorsubstrate; a conductive structure that protrudes from a surface of thesemiconductor substrate; and a first passivation layer, the firstpassivation layer overlaying the conductive structure by a firstthickness, the first passivation layer overlaying the surface by asecond thickness greater than the first thickness, wherein the firstpassivation layer is planar at a top surface over the first thicknessand the second thickness, wherein the first passivation layer comprisesan opening extending from the top surface to the conductive structure.22. The semiconductor device of claim 21, wherein the first passivationlayer coats both the first surface and the conductive structure.
 23. Thesemiconductor device of claim 21, wherein the first thickness is of aminimum amount sufficient for the first passivation layer to coat theconductive structure, and the second thickness comprises the firstthickness and the height.
 24. The semiconductor device of claim 21,wherein the first passivation layer comprises at least one of siliconmononitride (SiN), Un-doped Silicate Glass (USG), and FluorinatedSilicate Glass (FSG).
 25. The semiconductor device of claim 21,comprising: a vertical conductive structure extending through the firstpassivation layer to conductively couple with the conductive structure.26. The semiconductor device of claim 25, wherein the verticalconductive structure is in conductive communication with an externalsemiconductor device different than the semiconductor device.
 27. Thesemiconductor device of claim 21, comprising: a conductive featurewithin the semiconductor device, wherein: the conductive structure is inconductive communication with the conductive feature, and the conductivefeature comprises at least one of a source, a drain, and a gateelectrode of a transistor.
 28. A semiconductor device, comprising: asemiconductor substrate; a conductive structure that protrudes from asurface of the semiconductor substrate; a first passivation layer, thefirst passivation layer overlaying the conductive structure by a firstthickness, the first passivation layer overlaying the surface by asecond thickness greater than the first thickness, wherein the firstpassivation layer is planar at a top surface over the first thicknessand the second thickness, wherein the first passivation layer comprisesan opening extending from the top surface to the conductive structure; avertical conductive structure extending through the first passivationlayer to conductively couple with the conductive structure; a conductivefeature within the semiconductor device, wherein the conductivestructure is in conductive communication with the conductive feature,and the conductive feature comprises at least one of a source, a drain,and a gate electrode of a transistor; and a second passivation layeroverlaying the first passivation layer.
 29. The semiconductor device ofclaim 28, wherein the first thickness is of a minimum amount sufficientfor the first passivation layer to coat the conductive structure, andthe second thickness comprises the first thickness and the height. 30.The semiconductor device of claim 28, wherein the vertical conductivestructure is in conductive communication with an external semiconductordevice different than the semiconductor device.